Materials Science Forum
Trans Tech Publications Ltd Β· Switzerland Β· Est. 1967
Aims & Scope
This special edition focuses on scientific principles and the technologies that underpin the preparation and processing of SiC wafers. The technological operations involved in transforming a bulk SiC crystal into a device-ready substrate are described. The presented information will contribute to continued advances in manufacturing and the development of the next generation of high-performance electronic devices.
General Information
Submission Info
Ethics & Quality
Think.Check.Submit Compliance
Based on the Think.Check.Submit framework by DOAJ, COPE & OASPA. All data from verified open sources.
Publication & Citation Trend
Source: OpenAlex Β· Each yearβs green bar = citations earned by that yearβs papers, counted to date β so recent years look lower simply because their papers havenβt had time to be cited yet.
SJR Quartile by Discipline
Scimago ranks this journal separately in each subject category β its quartile can differ by discipline.
Subject Classification
Scopus Categories
Research Topics (OpenAlex)
Frequently asked questions about Materials Science Forum
Is Materials Science Forum a predatory journal?
PubScope has no integrity flags on record for Materials Science Forum: it is indexed in Scopus, and is not on DOAJ's withdrawn list. Its PubScope Trust Score is 58/100. Indexing is a transparency signal, not a guarantee β always confirm fit and policies before submitting.
What is the impact factor of Materials Science Forum?
Materials Science Forum is not in the Web of Science Core Collection, so it has no official Clarivate Journal Impact Factor. Its SCImago SJR score is 0.155.
Is Materials Science Forum indexed in Scopus and Web of Science?
Materials Science Forum is indexed in Scopus.
What is the aims and scope of Materials Science Forum?
This special edition focuses on scientific principles and the technologies that underpin the preparation and processing of SiC wafers. The technological operations involved in transforming a bulk SiC crystal into a device-ready substrate are described. The presented information will contribute to continued advances in manufacturing and the development of the next generation of high-performance electronic devices.
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See all βData updated: 2026-05-22 Β· Sources: SJR, DOAJ, OpenAlex, WoS, Crossref