This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.
⚡ Speed vs Prestige
How does this journal balance review speed with impact level?
Based on the Think.Check.Submit framework by DOAJ, COPE & OASPA. All data from verified open sources.
Publication & Citation Trend
Articles published
Times cited
2019
2020
2021
2022
2023
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2026
Source: OpenAlex · Note: citations accumulate over time so older years appear higher
SJR Quartile by Discipline
Scimago ranks this journal separately in each subject category — its quartile can differ by discipline.
Atomic and Molecular Physics, and OpticsQ4
Condensed Matter PhysicsQ4
Materials Science (miscellaneous)Q4
Subject Classification
Scopus Categories
Condensed Matter PhysicsAtomic and Molecular Physics, and OpticsMaterials Science (miscellaneous)
Research Topics (OpenAlex)
Silicon and Solar Cell TechnologiesAluminum Alloy Microstructure PropertiesAluminum Alloys Composites PropertiesSemiconductor materials and devicesMetallurgy and Material FormingSemiconductor materials and interfacesThin-Film Transistor TechnologiesMetal and Thin Film MechanicsMicrostructure and mechanical propertiesAdvanced Surface Polishing Techniques