Solid State Phenomena

Aims & Scope

This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.

A twelfth criterion — whether APC fees are clearly disclosed — is not scored here; it is left out of the total rather than counted as a failure. Publication charges appear in the metrics card above.

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Source: OpenAlex · Each year’s green bar = citations earned by that year’s papers, counted to date — so recent years look lower simply because their papers haven’t had time to be cited yet.

SJR Quartile by Discipline

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Subject Classification