Solid State Phenomena
Trans Tech Publications Ltd Β· Switzerland Β· Est. 1963
Aims & Scope
This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.
General Information
Submission Info
Ethics & Quality
Think.Check.Submit Compliance
Based on the Think.Check.Submit framework by DOAJ, COPE & OASPA. All data from verified open sources.
Publication & Citation Trend
Source: OpenAlex Β· Each yearβs green bar = citations earned by that yearβs papers, counted to date β so recent years look lower simply because their papers havenβt had time to be cited yet.
SJR Quartile by Discipline
Scimago ranks this journal separately in each subject category β its quartile can differ by discipline.
Subject Classification
Scopus Categories
Research Topics (OpenAlex)
Frequently asked questions about Solid State Phenomena
Is Solid State Phenomena a predatory journal?
PubScope has no integrity flags on record for Solid State Phenomena: it is indexed in Scopus, and is not on DOAJ's withdrawn list. Its PubScope Trust Score is 58/100. Indexing is a transparency signal, not a guarantee β always confirm fit and policies before submitting.
What is the impact factor of Solid State Phenomena?
Solid State Phenomena is not in the Web of Science Core Collection, so it has no official Clarivate Journal Impact Factor. Its SCImago SJR score is 0.132.
Is Solid State Phenomena indexed in Scopus and Web of Science?
Solid State Phenomena is indexed in Scopus.
What is the aims and scope of Solid State Phenomena?
This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.
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See all βData updated: 2026-05-22 Β· Sources: SJR, DOAJ, OpenAlex, WoS, Crossref