IEEE Transactions on Electron Devices publishes research on the physics, design, and fabrication of electronic devices. Recent articles focus on semiconductor device reliability, including breakdown mechanisms and degradation kinetics in FinFETs and GaN-based devices. The journal also covers novel materials and structures for advanced transistors, such as ferroelectric capacitors, metal-oxide-semiconductor field-effect transistors (MOSFETs), and quantum-well devices, exploring their performance characteristics and integration into memory and sensing applications.
Electrical and Electronic EngineeringElectronic, Optical and Magnetic Materials
Research Topics (OpenAlex)
Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor Quantum Structures and DevicesFerroelectric and Negative Capacitance Devices