HomeSearchIEEE Journal of the Electron Devices Society

IEEE Journal of the Electron Devices Society

Institute of Electrical and Electronics Engineers Inc. · United States · Est. 2012

ISSN2168-6734eISSN2168-6734
SJR Q2WOS SCIEScopus / SJRDOAJOpen Access
58
/ 100
Medium Risk
Score Breakdown
WoS SCIE/SSCI+25
Scopus Q2+18
DOAJ Verified+15
Total58
Journal Impact Factor
This journal is indexed in Web of Science (JCR) and has an official Journal Impact Factor. View the current value on the journal’s page ↗
SJR Score
0.519
H-Index
62
CiteScore
5
SNIP
1.142
Total Works
1,920
Total Citations
25,066
2yr Mean Citedness
2.09
Free JIF alternative

Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original. All research papers benefit from rapid peer review and publication, and are deposited in IEEE Xplore.

⚡ Speed vs Prestige
How does this journal balance review speed with impact level?
9
weeks to review
Fast · median is 15 wks
Q2
SJR Rank
Top 50% in field

General Information

Country / RegionUnited States
Primary LanguageEnglish
1st Year Published2012
Frequency1
StatusActive (last: 2026)
Total Publications1,920
Publisher OrgInstitute of Electrical and Electronics Engineers
OA Since2012
Visit Journal Website

Submission Info

APC Cost$1,350Below median
Peer ReviewSingle-blind
Review Time~9 weeks
Acceptance Rate
OA LicenseCC BY, CC BY-NC-ND
OA Rate

Ethics & Quality

COPE Member✗ No
OASPA Member✗ No
Not on Predatory Lists✓ Yes
Plagiarism Detection✓ Yes

Think.Check.Submit Compliance

10/12 · 83%
Do you know the journal / publisher?
Institute of Electrical and Electronics Engineers Inc.
Does the journal have a website?
✓ Linked
Is the ISSN verified?
2168-6734 / 2168-6734
Indexed in a trusted database?
WoS, Scopus, DOAJ
Peer review process documented?
Single-blind
Follows ethical publishing standards (COPE)?
N/A
APC fees clearly disclosed?
$1,350
Not on predatory/blacklists?
✓ Clean
Long-term digital preservation?
N/A
Plagiarism detection in place?
Yes
Listed in DOAJ (verified OA)?
DOAJ verified
Primary language documented?
English

Based on the Think.Check.Submit framework by DOAJ, COPE & OASPA. All data from verified open sources.

Publication & Citation Trend

Articles published
Times cited
2019
2020
2021
2022
2023
2024
2025
2026

Source: OpenAlex · Note: citations accumulate over time so older years appear higher

SJR Quartile by Discipline

Scimago ranks this journal separately in each subject category — its quartile can differ by discipline.

Electrical and Electronic EngineeringQ2
Electronic, Optical and Magnetic MaterialsQ2
BiotechnologyQ3

Subject Classification

Web of Science Categories

Engineering, Electrical & Electronic

Scopus Categories

BiotechnologyElectrical and Electronic EngineeringElectronic, Optical and Magnetic Materials

Research Topics (OpenAlex)

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesSilicon Carbide Semiconductor TechnologiesThin-Film Transistor TechnologiesGaN-based semiconductor devices and materialsAdvanced Memory and Neural ComputingSemiconductor materials and interfacesNanowire Synthesis and ApplicationsIntegrated Circuits and Semiconductor Failure Analysis
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Data updated: 2026-05-22 · Sources: SJR, DOAJ, OpenAlex, WoS, Crossref