Defect and Diffusion Forum

Aims & Scope

This special edition is devoted to the identification, characterisation, and understanding of the effects of structural critical imperfections of silicon carbide during bulk crystal growth and epitaxial deposition. Emphasis is placed on advanced analytical techniques that provide essential insight into the origin, distribution, and evolution of defects, enabling continuous improvement in crystal growth processes and epitaxial technologies. The publication aims to provide researchers and engineers with a deeper understanding of defect formation and characterisation, which is fundamental to achieving the material perfection required for the creation of reliable and efficient SiC-based electronic devices.

A twelfth criterion — whether APC fees are clearly disclosed — is not scored here; it is left out of the total rather than counted as a failure. Publication charges appear in the metrics card above.

Based on the Think.Check.Submit framework by DOAJ, COPE & OASPA. All data from verified open sources.

Source: OpenAlex · Each year’s green bar = citations earned by that year’s papers, counted to date — so recent years look lower simply because their papers haven’t had time to be cited yet.

SJR Quartile by Discipline

Scimago ranks this journal separately in each subject category — its quartile can differ by discipline.

Subject Classification